Datasheet Details
| Part number | FDS8433A |
|---|---|
| Manufacturer | onsemi |
| File Size | 171.51 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDS8433A Datasheet
|
|
|
General Description
This P-Channel enhancement mode power field effect transistors is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.
This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V.
- Fast switching speed.
- High density cell design for extremely low RDS(on).
- High power and current handling capability. D D 5 D D 6 7 G SO-8 SS S 8 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (.