FDS86240
Description
Shielded Gate MOSFET Technology - Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A - Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A - High Performance Trench Technology for Extremely Low rDS(on) - High Power and Current Handling Capability in a Widely Used Surface Mount Package - 100% UIL Tested - RoHS pliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
