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FDS86242 Datasheet N-channel Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS86242 N-Channel PowerTrench® MOSFET August 2010 FDS86242 N-Channel PowerTrench® MOSFET 150 V, 4.

General Description

„ Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A „ Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A „ High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

„ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS pliant Applications „ DC/DC converters and Off-Line UPS „ Distributed Power Architectures and VRMs „ Primary Switch for 24V and 48V Systems „ High Voltage Synchronous Rectifier D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1) (Note 1a) Ratings 150 ±20 4.1 20 40 5.0 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 25 50 °C/W Device Marking FDS86242 Device FDS86242 Package SO-8 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2010 Fairchild Semiconductor Corporation FDS86242 Rev.

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Key Features

  • General.

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