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FDS86242 - N-Channel PowerTrench MOSFET

General Description

Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optim

Key Features

  • General.

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FDS86242 N-Channel PowerTrench® MOSFET August 2010 FDS86242 N-Channel PowerTrench® MOSFET 150 V, 4.1 A, 67 mΩ Features General Description „ Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A „ Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A „ High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.