FDS86242
Overview
Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant.
