Datasheet Summary
FDS86242 N-Channel PowerTrench® MOSFET
August 2010
N-Channel PowerTrench® MOSFET
150 V, 4.1 A, 67 mΩ
Features
General Description
- Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
- Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A
- High performance trench technology for extremely low rDS(on)
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS pliant
Applications
- DC/DC converters and Off-Line UPS
- Distributed Power Architectures and VRMs
- Primary...
