FDS8896 Datasheet | Fairchild Semiconductor

Features r DS(ON) = 6.0mΩ, VGS = 10V, ID = 15A r DS(ON) = 7.3mΩ, V GS = 4.5V, ID = 14A High performance trench technology for extremely low r DS(ON) Low gate charge High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Applications DC/DC converters .. Branding Dash 4 3 2 1 6 7 1 2 3 4 SO-8 ©2004 Fairchild Semiconductor Corporation FDS8896 Rev. A1 .fairchildsemi. FDS8896 N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25o C, VGS = 10V, R θJA = 50o C/W) Continuous (TA = 25 C, VGS = 4.5V, Rθ JA = 50 C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature o o Ratings 30 ±20 15 14 Figure 4 196 2.5 20 -55 to 150 Units V V A A A m J W m W/o C o Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 25 50 85 o C/W o o C/W C/W Package Marking and Ordering Information Device Marking FDS8896 FDS8896 Device FDS8896 FDS8896_NL (Note 4) Package SO-8 SO-8 Reel Size 330mm 330mm Tape Width 12mm 12mm Quantity 2500 units 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 24V VGS = 0V VGS = ±20V TA = 150o C 30 1 250 ±100 V µA n A On Characteristics VGS(TH) Gate to Source Threshold Voltage V...