The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
FDS8896 N-Channel PowerTrench® MOSFET
FDS8896 N-Channel PowerTrench® MOSFET
30V, 15A, 6.0mΩ
Features
rDS(on) = 6.0mΩ, VGS = 10V, ID = 15A rDS(on) = 7.3mΩ, VGS = 4.5V, ID = 14A High performance trench technology for extremely low
rDS(on) Low gate charge
High power and current handling capability
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
DC/DC converters
Branding Dash
5 1
2 3 4
SO-8
5
4
6
3
7
2
8
1
©2007 Semiconductor Components Industries, LLC.
1
October-2017, Rev.