FDS8896 Datasheet | onsemi

Features - r DS(on) = 6.0mΩ, VGS = 10V, ID = 15A - r DS(on) = 7.3mΩ, VGS = 4.5V, ID = 14A - High performance trench technology for extremely low r DS(on) - Low gate charge - High power and current handling capability - Ro HS pliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Applications - DC/DC converters Branding Dash 5 1 2 3 4 SO-8 ©2007 Semiconductor ponents Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDS8896/D FDS8896 N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25o C, VGS = 10V, RθJA = 50o C/W) Continuous (TA = 25o C, VGS = 4.5V, RθJA = 50o C/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o...