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FDS8978 - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

DC/DC converters D2

Key Features

  • rDS(on) = 18mΩ, VGS = 10V, ID = 7.5A.
  • rDS(on) = 21mΩ, VGS = 4.5V, ID = 6.9A.
  • High performance trench technology for extremely low rDS(on).
  • Low gate charge.
  • High power and current handling capability.
  • 100% Rg Tested.
  • RoHS Compliant D1 D1 D2 D2 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS8978 Dual N-Channel PowerTrench® MOSFET FDS8978 N-Channel PowerTrench® MOSFET 30V, 7.5A, 18mΩ January 2011 Features „ rDS(on) = 18mΩ, VGS = 10V, ID = 7.5A „ rDS(on) = 21mΩ, VGS = 4.5V, ID = 6.9A „ High performance trench technology for extremely low rDS(on) „ Low gate charge „ High power and current handling capability „ 100% Rg Tested „ RoHS Compliant D1 D1 D2 D2 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.