Datasheet Summary
FDS8978 Dual N-Channel PowerTrench® MOSFET
FDS8978 N-Channel PowerTrench® MOSFET
30V, 7.5A, 18mΩ
January 2011
Features
- rDS(on) = 18mΩ, VGS = 10V, ID = 7.5A
- rDS(on) = 21mΩ, VGS = 4.5V, ID = 6.9A
- High performance trench technology for extremely low rDS(on)
- Low gate charge
- High power and current handling capability
- 100% Rg Tested
- RoHS pliant
D1 D1
D2 D2
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
- DC/DC converters
D2 5 D2...
