Datasheet Summary
December 2001
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V
- 25V).
Features
- - 3.4 A,
- 30 V RDS(ON) = 130 mΩ @ VGS =
- 10 V RDS(ON) = 200 mΩ @ VGS =
- 4.5 V
- Low gate charge (2.4nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- Power management
- Load switch
- Battery protection
D D SO-8
DD D D
5 6
4 3 2 1
Pin 1 SO-8
G G S S...
