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FDS9400A
P-Channel 30-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.042 at VGS = - 10 V
- 30
0.055 at VGS = - 6 V
0.060 at VGS = - 4.5 V
ID (A) - 5.8 - 5.0 - 4.4
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
S
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID
- 5.8 - 4.6
- 4.1 - 3.2
A
IDM
- 30
Continuous Source Current (Diode Conduction)a
IS
- 2.3
- 1.
FDS9400A Datasheet
