FDS9936A - Dual N-Channel Enhancement Mode Field Effect Transistor

Product Overview

Fairchild Semiconductor

Part number	FDS9936A
Manufacturer	Fairchild Semiconductor
File Size	416.71 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	FDS9936A Datasheet
Additional preview pages of the FDS9936A datasheet.

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance.

5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V, RDS(ON) = 0.060 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D2 D1 D1 5 4 3 2 1 S FD 6A 3 99 G2 pin 1 6 7 SO-8 S1 G1 S2 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -.

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Published: Mar 30, 2005 |