FDS9936A Datasheet Dual N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Fairchild (now onsemi)

Overview: May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect.

Datasheet Details

Part number	FDS9936A
Manufacturer	Fairchild (now onsemi)
File Size	416.71 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	FDS9936A_FairchildSemiconductor.pdf

General Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance.

These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V, RDS(ON) = 0.060 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D2 D1 D1 5 4 3 2 1 S FD 6A 3 99 G2 pin 1 6 7 SO-8 S1 G1 S2 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -.

FDS9936A Distributor

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