FDS9936A
Description
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Key Features
- RDS(ON) = 0.040 Ω @ VGS = 10 V, RDS(ON) = 0.060 Ω @ VGS = 4.5 V
- High density cell design for extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package
