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FDS9958_F085 - Dual P-Channel PowerTrench MOSFET

General Description

Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A Qualified to AEC Q101 RoHS Compliant These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has

Key Features

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FDS9958_F085 Dual P-Channel PowerTrench® MOSFET November 2008 FDS9958_F085 Dual P-Channel PowerTrench® MOSFET -60V, -2.9A, 105mΩ Features General Description „ Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A „ Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A „ Qualified to AEC Q101 „ RoHS Compliant These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.