FDS9958_F085 Datasheet | Fairchild Semiconductor

FDS9958_F085 Dual P-Channel PowerTrench® MOSFET November 2008 Dual P-Channel PowerTrench® MOSFET -60V, -2.9A, 105mΩ Features General Description - Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A - Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A - Qualified to AEC Q101 - RoHS pliant These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection...