FDS9958_F085 Description
Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A Qualified to AEC Q101 RoHS pliant These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well...
FDS9958_F085 Key Features
- Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A
- Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A
- Qualified to AEC Q101
- RoHS pliant
FDS9958_F085 Applications
- Pulsed Single Pulse Avalanche Energy Power Dissipation for Dual Operation Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range