FDT3612 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
FDT3612 Key Features
- 3.7 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V
- Fast switching speed
- Low gate charge (14nC typ)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package