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FDT3612 - N-Channel MOSFET

General Description

This N

to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • 3.7 A, 100 V.
  • RDS(ON) = 120 mW @ VGS = 10 V.
  • RDS(ON) = 130 mW @ VGS = 6 V.
  • Fast Switching Speed.
  • Low Gate Charge (14 nC Typ).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number FDT3612
Manufacturer onsemi
File Size 210.15 KB
Description N-Channel MOSFET
Datasheet download datasheet FDT3612 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 100 V FDT3612 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 3.