FDT434P Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDT434P Key Features
- 5.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.070 Ω @ VGS = -2.5 V
- Low gate charge (13nC typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package