Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- 5.5 A,.
- 20 V. RDS(ON) = 0.050 Ω @ VGS =.
- 4.5 V RDS(ON) = 0.070 Ω @ VGS =.
- 2.5 V.
- Low gate charge (13nC typical).
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability in a widely used surface mount package.
FDT434P Datasheet
