FDT434P
FDT434P is P-Channel MOSFET manufactured by onsemi.
Description
This P-Channel 2.5V specified MOSFET is produced using
Semiconductor’s advanced
Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Applications
- Low Dropout Regulator
- DC/DC converter
- Load switch
- Motor driving
Features
- - 5.5 A,
- 20 V. RDS(ON) = 0.050 Ω @ VGS =
- 4.5 V RDS(ON) = 0.070 Ω @ VGS =
- 2.5 V.
- Low gate charge (13n C typical)
- High performance trench technology for extremely low RDS(ON) .
- High power and current handling capability in a widely used surface mount package.
SOT-22 3
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note...
