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FDT439N - N-Channel MOSFET

General Description

This N

is produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance and provide superior switching performance.

Key Features

  • 6.3 A, 30 V RDS(on) = 0.045 W @ VGS = 4.5 V RDS(on) = 0.058 W @ VGS = 2.5 V.
  • Fast switching speed.
  • High power and current handling capability in a widely used surface mount package.
  • This Device is Pb.
  • Free.

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Datasheet Details

Part number FDT439N
Manufacturer onsemi
File Size 201.79 KB
Description N-Channel MOSFET
Datasheet download datasheet FDT439N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com Transistor, N-Channel, Field Effect, Enhancement Mode, 2.5 V Specified FDT439N General Description This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. Features • 6.3 A, 30 V RDS(on) = 0.045 W @ VGS = 4.5 V RDS(on) = 0.058 W @ VGS = 2.5 V • Fast switching speed. • High power and current handling capability in a widely used surface mount package.