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FDT439N - N-Channel MOSFET

General Description

This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance.

Key Features

  • • • • 6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V Fast switching speed. High power and current handling capabitlity in a widely used surface mount package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. Features • • • 6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V Fast switching speed. High power and current handling capabitlity in a widely used surface mount package.