Datasheet Summary
June 1999
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook puter power management, battery powered circuits, and DC motor control.
Features
6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V Fast switching speed. High power and current...
