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FDT439N Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect.

General Description

This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance.

These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

Key Features

  • • • • 6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V Fast switching speed. High power and current handling capabitlity in a widely used surface mount package.

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