| Part Number | FDT439N |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel enhancement mode power field effect transistor
is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minim.
* 6.3 A, 30 V RDS(on) = 0.045 W @ VGS = 4.5 V RDS(on) = 0.058 W @ VGS = 2.5 V * Fast switching speed. * High power and current handling capability in a widely used surface mount package. * This Device is Pb *Free Applications * DC/DC Converter * Load Switch * Motor Driving VDSS 30 V RDS(ON) MAX 0.0. |