FDT439N
Overview
This N-Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
- 6.3 A, 30 V RDS(on) = 0.045 W @ VGS = 4.5 V RDS(on) = 0.058 W @ VGS = 2.5 V
- Fast switching speed.
- High power and current handling capability in a widely used surface mount package.
- This Device is Pb-Free
