FDT434P Datasheet and Specifications PDF

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low.

*
*5.5 A,
*20 V. RDS(ON) = 0.050 Ω @ VGS =
*4.5 V RDS(ON) = 0.070 Ω @ VGS =
*2.5 V.
* Low gate charge (13nC typical)
* High performance trench technology for extremely low RDS(ON) .
* High power and current handling capability in a widely used surface mount package. Applications
* Low Dropout Regul.

This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain lo.

*
*5.5 A,
*20 V. RDS(ON) = 0.050 Ω @ VGS =
*4.5 V RDS(ON) = 0.070 Ω @ VGS =
*2.5 V.
* Low gate charge (13nC typical)
* High performance trench technology for extremely low RDS(ON) .
* High power and current handling capability in a widely used surface mount package. D D SOT-22 3 S D G G D S A.