FDT458P Description
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
FDT458P Key Features
- 3.4 A, -30 V. RDS(ON) = 130 mΩ @ V GS = 10 V RDS(ON) = 200 mΩ @ V GS = 4.5 V
- Fast switching speed
- Low gate charge (2.5 nC typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package