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FDT458P - 30V P-Channel MOSFET

General Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

Key Features

  • 3.4 A,.
  • 30 V. RDS(ON) = 130 mΩ @ V GS = 10 V RDS(ON) = 200 mΩ @ V GS = 4.5 V.
  • Fast switching speed.
  • Low gate charge (2.5 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDT458P June 2001 FDT458P 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. Features • 3.4 A, –30 V. RDS(ON) = 130 mΩ @ V GS = 10 V RDS(ON) = 200 mΩ @ V GS = 4.5 V • Fast switching speed • Low gate charge (2.