FDT458P Datasheet | Fairchild Semiconductor

Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. Features - 3.4 A, - 30 V. RDS(ON) = 130 mΩ @ V GS = 10 V RDS(ON) = 200 mΩ @ V GS = 4.5 V - Fast switching speed - Low gate charge (2.5 n C typical) - High performance trench technology for extremely low RDS(ON) - High power and current handling capability in a widely used surface mount package Applications - Battery chargers - Motor drives S D SOT-223 G SOT-223- (J23Z) Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation TA=25o C unless otherwise noted Parameter Ratings - 30 ±20 (Note 1a) Units 3.4 10 3.0 1.3 1.1 - 55 to +150 (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature...