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FDT457N - N-Channel MOSFET

General Description

These N

are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance, provide superior switching performance.

Key Features

  • 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V.
  • High Density Cell Design for Extremely Low RDS(ON).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • This Device is Pb.
  • Free.

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Datasheet Details

Part number FDT457N
Manufacturer onsemi
File Size 198.81 KB
Description N-Channel MOSFET
Datasheet download datasheet FDT457N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor, N-Channel, Field Effect, Enhancement Mode FDT457N General Description These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. Features • 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.