FDT461N Datasheet | Fairchild Semiconductor

Features - r DS(ON) = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A - Qg(tot) = 2.36n C (Typ.), VGS = 10V - Low Miller Charge - Low QRR Body Diode Applications - Servo Motor Load Control - DC-DC converters DRAIN (FLANGE) GATE DRAIN SOURCE SOT-223 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25o C, VGS = 10V, RθJA= 110o C/W) Continuous (TA = 25o C, VGS = 4.5V, RθJA= 110o C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature 0.54 0.4 Figure 4 6.3 1.13 9 -55 to 150 A A A m J W m W/o C o C Ratings 100 ±20 Units V V Thermal Characteristics RθJA RθJA RθJA Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in2 Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in 110 128 147 o o C/W C/W Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in2 o C/W Package Marking and Ordering Information Device Marking 461 Device FDT461N Package SOT-223 Reel Size 13” Tape Width 12mm Quantity 2500 units ©2004 Fairchild Semiconductor Corporation FDT461N Rev. A1 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 80V VGS = 0V VGS = ±20V TC = 125o C 100 1 250 ±100 V µA n A On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 0.54A, VGS = 10V r DS(ON) Drain to Source On Resistance ID = 0.4A, VGS = 4.5V ID = 0.54A, VGS = 10V, TJ = 150o C 0.8 1.40 1.45 2.80 2 2.0 2.5 4.0 Ω V Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(4.5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Total Gate Charge at 4.5V Threshold Gate Charge Gate to...