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FDT461N - N-Channel Logic Level PowerTrench MOSFET

Key Features

  • rDS(ON) = 1.45Ω (Typ. ), VGS = 4.5V, ID = 0.4A.
  • Qg(tot) = 2.36nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.

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Full PDF Text Transcription (Reference)

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FDT461N April 2004 FDT461N N-Channel Logic Level PowerTrench® MOSFET 100V, 0.4A, 2.5Ω Features • rDS(ON) = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Qg(tot) = 2.36nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode Applications • Servo Motor Load Control • DC-DC converters DRAIN (FLANGE) D GATE DRAIN SOURCE G D S SOT-223 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25oC, VGS = 10V, RθJA= 110oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA= 110oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 0.54 0.4 Figure 4 6.3 1.