FDU3706 Overview
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
Key Features
- 50 A, 20 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 11 mΩ @ VGS = 4.5 V RDS(ON) = 16 mΩ @ VGS = 2.5 V
- Low gate charge (16 nC)
- Fast Switching
- High performance trench technology for extremely low RDS(ON) D G DTO-P-A25K2 (TO-252) GDS I-PAK (TO-251AA) G S
