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FDU5N53 - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 1.25Ω ( Typ. )@ VGS = 10V, ID = 2A.
  • Low gate charge ( Typ. 11nC).
  • Low Crss ( Typ. 5pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant UniFETTM tm.

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Full PDF Text Transcription for FDU5N53 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDU5N53. For precise diagrams, and layout, please refer to the original PDF.

FDD5N53 / FDU5N53 N-Channel MOSFET January 2009 FDD5N53/FDU5N53 N-Channel MOSFET 530V, 4A, 1.5Ω Features • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge (...

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ures • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies

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