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FDW2521C
May 2002
FDW2521C
Complementary PowerTrench MOSFET
General Description
This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
• Q1: N-Channel 5.5 A, 20 V. RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V
Applications
• DC/DC conversion • Power management • Load switch
•
Q2: P-Channel –3.8 A, 20 V. RDS(ON) = 43 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.
FDW2521C Datasheet
