FDW252P
Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Key Features
- -8.8 A, -20 V. RDS(ON) = 0.012 Ω @ VGS = -4.5 V RDS(ON) = 0.018 Ω @ VGS = -2.5 V Extended VGSS range (±12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package
