FDW2503NZ - Dual N-Channel MOSFET

Fairchild (now onsemi)

General Description

This N -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

12V).

Key Features

5.5 A, 20 V. RDS(ON) = 20 mΩ @ V GS = 4.5V RDS(ON) = 26 mΩ @ V GS = 2.5V.
Extended V GSS range (±12V) for battery.

📥 Download Datasheet

FDW2503NZ dual n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDW2503NZ
Manufacturer	Fairchild (now onsemi)
File Size	66.41 KB
Description	Dual N-Channel MOSFET
Datasheet	FDW2503NZ Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FDWS5360L-F085	N-Channel Power MOSFET	ON Semiconductor
FDWS86368-F085	80V 80A N-Channel MOSFET	ON Semiconductor
FDWS9408-F085	N-Channel Power MOSFET	ON Semiconductor
FDWS9420-F085	N-Channel Power MOSFET	ON Semiconductor
FDWS9511L-F085	P-Channel Power MOSFET	ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number	Description
FDW2503N	Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2501N	Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2501NZ	Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2502P	Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2502PZ	Dual P-Channel 2.5V Specified PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FDW2503NZ October 2001 FDW2503NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 20 mΩ @ V GS = 4.5V RDS(ON) = 26 mΩ @ V GS = 2.