FDW2508PB Description
This P-Channel 1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has been optimized for battery power management applications. Max rDS(on) = 18mΩ at VGS = 4.5V, ID = 6A Max rDS(on) = 22mΩ at VGS = 2.5V, ID = 5A Max rDS(on) = 30mΩ at VGS = 1.8V, ID = 4A Low gate charge High performance trench technology for extremely low rDS(on) Low profile TSSOP-8 package RoHS...