FDW2508PB Datasheet | Fairchild Semiconductor

Features General Description This P-Channel - 1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage Power Trench®. It has been optimized for battery power management applications. - Max r DS(on) = 18mΩ at VGS = - 4.5V, ID = - 6A - Max r DS(on) = 22mΩ at VGS = - 2.5V, ID = - 5A - Max r DS(on) = 30mΩ at VGS = - 1.8V, ID = - 4A - Low gate charge - High performance trench technology for extremely low r DS(on) - Low profile TSSOP-8 package - Ro HS pliant Application - Power management - Load switch - Battery protection .. TSSOP8 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation-Dual Operation Power Dissipation-Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Parameter Ratings - 12 ±8 - 6 - 30 2 1.6 1 - 55 to +150 °C W Units V V A Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 80 125 °C/W Package Marking and Ordering Information Device Marking 2508PB Device FDW2508PB Package TSSOP-8 Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDW2508PB Rev.B .fairchildsemi. FDW2508PB Dual P-Channel - 1.8V Specified Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise...