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FDW2508PB - Dual P-Channel MOSFET

General Description

This P-Channel

1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®.

It has been optimized for battery power management applications.

Max rDS(on) = 18mΩ at VGS = 4.5V, ID = 6A Max rDS(on) = 22mΩ at VGS = 2.5V,

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET October 2006 FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET –12V, –6A, 18mΩ Features General Description This P-Channel –1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has been optimized for battery power management applications. „ Max rDS(on) = 18mΩ at VGS = –4.5V, ID = –6A „ Max rDS(on) = 22mΩ at VGS = –2.5V, ID = –5A „ Max rDS(on) = 30mΩ at VGS = –1.8V, ID = –4A „ Low gate charge „ High performance trench technology for extremely low rDS(on) „ Low profile TSSOP-8 package „ RoHS compliant Application „ Power management „ Load switch „ Battery protection www.DataSheet4U.