| Part number | FDW2508PB |
|---|---|
| Datasheet | FDW2508PB_FairchildSemiconductor.pdf |
| File Size | 443.40 KB |
| Manufacturer | Fairchild (now onsemi) |
| Description | Dual P-Channel MOSFET |
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This P-Channel 1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has been optimized for battery power management applications. Max rDS(on) = 18mΩ at VGS = 4.5V, ID = 6A Max rDS(on) = 22mΩ at VGS = 2.5V, ID = 5A Max rDS(on) = 30mΩ at VGS = 1.8V, ID = 4A Low gate charge High performance trench technology for extremely low rDS(on) Low profile TSSOP-8 package RoHS...
See all Fairchild (now onsemi) datasheets
| Part Number | Description |
|---|---|
| FDW2508P | Dual P-Channel 1.8 V Specified PowerTrench MOSFET |
| FDW2501N | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2501NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2502P | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2502PZ | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2503N | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2503NZ | Dual N-Channel MOSFET |
| FDW2504P | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2506P | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2507N | Common Drain N-Channel 2.5V specified PowerTrench MOSFET |
