Datasheet Details
| Part number | FDW2508P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 135.27 KB |
| Description | Dual P-Channel 1.8 V Specified PowerTrench MOSFET |
| Datasheet |
 FDW2508P Datasheet
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General Description
This P-Channel
1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Key Features
- 6 A,.
- 12 V. RDS(ON) = 18 mΩ @ VGS =.
- 4.5 V RDS(ON) = 22 mΩ @ VGS =.
- 2.5 V RDS(ON) = 30 mΩ @ VGS =.
- 1.8 V Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package.