FDW2508P Datasheet | Fairchild Semiconductor

Description This P-Channel - 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Features - - 6 A, - 12 V. RDS(ON) = 18 mΩ @ VGS = - 4.5 V RDS(ON) = 22 mΩ @ VGS = - 2.5 V RDS(ON) = 30 mΩ @ VGS = - 1.8 V Low gate charge(26n C typical) High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package Applications - - - Power management Load switch Battery protection - - - G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25o C unless otherwise noted Parameter Ratings - 12 ±8 (Note 1) Units V V A W °C - 6 - 30 1.3 1 - 55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 100...