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FDW2502P - Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process.

12V).

Key Features

  • 4.4 A,.
  • 20 V. RDS(ON) = 0.035 Ω @ VGS =.
  • 4.5 V RDS(ON) = 0.057 Ω @ VGS =.
  • 2.5 V.
  • Extended VGSS range (±12V) for battery.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDW2502P May 2000 PRELIMINARY FDW2502P Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V). Features • –4.4 A, –20 V. RDS(ON) = 0.035 Ω @ VGS = –4.5 V RDS(ON) = 0.057 Ω @ VGS = –2.5 V. • Extended VGSS range (±12V) for battery applications. • High performance trench technology for extremely low RDS(ON) . • Low profile TSSOP-8 package.