FDW9926A
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
- 10V).
Applications
- Battery protection
- Load switch
- Power management
Features
- 4.5 A, 20 V.
RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 45 mΩ @ VGS = 2.5 V
- Optimized for use in battery circuit applications
- Extended VGSS range (±10V) for battery applications
- High performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8 package
G2 S2 S2 D2
TSSOP-8
G1 S1 S1 D1
Pin 1
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
(Note 1a)
Total Power Dissipation
(Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient...
