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FDW9926NZ - Common Drain N-Channel 2.5V specified PowerTrench MOSFET

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process.

10V).

Features

  • 4.5 A, 20 V. RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 45 mΩ @ VGS = 2.5 V ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V Low profile TSSOP-8 package.

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FDW9926NZ March 2004 FDW9926NZ Common Drain N-Channel 2.5V specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Features • 4.5 A, 20 V. RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 45 mΩ @ VGS = 2.5 V ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) @ VGS = 2.
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