FDW9926NZ
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
- 10V).
Features
- 4.5 A, 20 V. RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 45 mΩ @ VGS = 2.5 V ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V Low profile TSSOP-8 package
- -
Applications
- -
- Battery protection Load switch Power management
- G2 S2 S2 D2 G1 S1 S1 D1
Pin 1
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Total Power Dissipation
TA=25o C unless otherwise noted
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W °C
4.5 30 1.0 0.6
- 55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note...
