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FDZ5047N - 30V N-Channel Logic Level PowerTrench BGA MOSFET

General Description

Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N minimizes both PCB space and RDS(ON).

Key Features

  • 22 A, 30 V. RDS(ON) = 2.9 mΩ @ VGS = 10 V RDS(ON) = 4.5 mΩ @ VGS = 4.5 V.
  • Occupies only 27.5 mm2 of PCB area: 1/5 of the area of a TO-220 package.
  • Ultra-thin package: less than 0.90 mm height when mounted to PCB.
  • Outstanding thermal transfer characteristics.
  • Ultra-low gate charge x RDS(ON) product F5047 Pin 1 DDDDDD DSSSSD DSSSSD DSSSSD DSSSSD DGS S SD Bottom Pin 1 Top Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VG.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ5047N January 2004 FDZ5047N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Applications • DC/DC converters • Solenoid drive Features • 22 A, 30 V. RDS(ON) = 2.9 mΩ @ VGS = 10 V RDS(ON) = 4.