FES16GT Datasheet | Fairchild Semiconductor

Features - - - - Low forward voltage drop. High surge current capacity. High current capability. High reliability. CASE .594(15.1) .587(14.91) TO-220AC .205(5.20) .195(4.95) Dimensions are in: inches (mm) .025(0.64) .014(0.35) 16 Ampere Glass Passivated Super Fast Rectifiers Absolute Maximum Ratings- Symbol IO if(surge) TA = 25°C unless otherwise noted Parameter Average Rectified Current .375 " lead length @ T A = 100°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature Value Units 250 7.81 62 16 1.2 -65 to +150 -65 to +150 A W m W/°C °C/W °C/W °C °C PD RθJA RθJL Tstg TJ - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics Parameter TA = 25°C unless otherwise noted Device 16AT 16BT 100 70 100 16CT 150 105 150 16DT 200 140 200 10 500 35 0.975 170 1.3 50 1.5 145 16FT 300 210 300 16GT 400 280 400 16HT 500 350 500 16JT 600 420 600 50 35 50 Units V V V µA µA n S V p F Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Blocking Voltage (Rated VR) Maximum Reverse Current @ rated VR TA = 25°C TA = 100°C Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Maximum Forward Voltage @ 16.0A Typical Junction Capacitance VR = 4.0. f = 1.0 MHz ©1999 Fairchild Semiconductor Corporation FES16AT - FES16JT, Rev. A FES16AT -...