FGA90N30 Datasheet | Fairchild Semiconductor

Features - High Current Capability - Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A - High Input Impedance Description Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential. TO-3P Absolute Maximum Ratings Symbol VCES VGES IC ICM PD TJ Tstg TL Notes: TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current (Note 1) 300 ± 30 @ TC = 25°C @ TC = 25°C @ TC = 25°C @ TC = 100°C 90 220 219 87 -55 to +150 -55 to +150 300 Units V V A A W W °C °C °C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds (1) Repetitive test , pulse width = 100usec , Duty = 0.5 - Ic_pulse limited by max Tj Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Ambient Typ. --- Max. 0.57 40 Units °C/W °C/W ©2006 Fairchild Semiconductor Corporation .fairchildsemi. FGA90N30 Rev. A .. FGA90N30 300V PDP IGBT Package Marking and Ordering...