FGA90N30D Datasheet | Fairchild Semiconductor

Features - High Current Capability - Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A - High Input Impedance Description Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential. TO-3P TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM IF IFM PD TJ Tstg TL Notes: Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current (Note 1) 300 ± 30 @ TC = 25°C .. @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C 90 220 10 40 219 87 -55 to +150 -55 to +150 300 Units V V A A A A W W °C °C °C Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds (1) Repetitive test , pulse width = 100usec , Duty = 0.5 - Ic_pulse limited by max Tj Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 0.57 1.56 40 Units °C/W °C/W °C/W ©2006 Fairchild Semiconductor Corporation .fairchildsemi. FGA90N30D Rev. A FGA90N30D 300V PDP...