FGD3325G2_F085 - N-Channel Ignition IGBT

Fairchild (now onsemi)

Key Features

SCIS Energy = 330mJ at TJ = 25oC.
Logic Level Gate Drive.
Qualified to AEC Q101.
RoHS Compliant.

FGD3325G2_F085 n-channel ignition igbt by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FGD3325G2_F085
Manufacturer	Fairchild (now onsemi)
File Size	521.14 KB
Description	N-Channel Ignition IGBT
Datasheet	FGD3325G2_F085 Datasheet

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Full PDF Text Transcription (Reference)

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FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT April 2015 Features SCIS Energy = 330mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak @2015 Fairchild Semiconductor Corporation FGD3325G2_F085 Rev. 1.0 1 www.fairchildsemi.com FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) ESCIS25 ISCIS = 14.8A, L = 3.