FGD3325G2_F085
FGD3325G2_F085 is N-Channel Ignition IGBT manufactured by Fairchild Semiconductor.
Features
- SCIS Energy = 330m J at TJ = 25o C
- Logic Level Gate Drive
- Qualified to AEC Q101
- Ro HS pliant
Applications
- Automotive lgnition Coil Driver Circuits
- Coil On Plug Applications
Package
GATE
EMITTER
COLLECTOR
JEDEC TO-252 D-Pak
@2015 Fairchild Semiconductor Corporation FGD3325G2_F085 Rev. 1.0
.fairchildsemi.
FGD3325G2_F085 Eco SPARK®2 330m J, 250V, N-Channel Ignition IGBT
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1m A)
BVECS Emitter to Collector Voltage
- Reverse Battery Condition (IC = 10m A)
ESCIS25 ISCIS = 14.8A, L = 3.0m Hy, RGE = 1KΩ
TC = 25°C
ESCIS150 ISCIS = 11.4A, L = 3.0m Hy, RGE = 1KΩ
TC = 150°C
IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25°C
IC110
Collector Current Continuous, at VGE =...
