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FGH30N120FTD Datasheet Trench IGBT

Manufacturer: Fairchild (now onsemi)

Overview: FGH30N120FTD 1200V, 30A Trench IGBT FGH30N120FTD 1200V, 30A Trench.

General Description

Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness.

This device is designed for soft switching applications.

C COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp.

Key Features

  • Field stop trench technology.
  • High speed switching.
  • Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A.
  • High input impedance.
  • RoHS compliant.

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