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FGH30N60LSD Datasheet IGBT

Manufacturer: Fairchild (now onsemi)

Overview: FGH30N60LSD — 600 V, 30 A PT IGBT FGH30N60LSD 600 V, 30 A PT.

General Description

Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor.

G CE TO-247 Absolute Maximum Ratings Symbol Description VCES VGES IC ICM (1) IFSM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25C @ TC = 100C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25C @ TC = 100C Storage Temperature Range Maximum Lead Temp.

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Key Features

  • Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A.
  • High Input Impedance.
  • Low Conduction Loss.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FGH30N60LSD PT IGBT ON Semiconductor

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FGH30N60LSD Distributor