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FGH30N60LSD - PT IGBT

General Description

the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor.

Key Features

  • Low Saturation Voltage: VCE(sat) =1.1 V @ IC = 30 A.
  • High Input Impedance.
  • Low Conduction Loss.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - PT 600 V, 30 A FGH30N60LSD Description Using ON Semiconductor ’s advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor. Features • Low Saturation Voltage: VCE(sat) =1.1 V @ IC = 30 A • High Input Impedance • Low Conduction Loss • This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS www.onsemi.