FGL60N100D Overview
Key Specifications
Package: TO-264-3
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 150 °C
Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications.
Key Features
- High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode
