FGL60N100D - IGBT

Fairchild (now onsemi)

General Description

Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity.

Key Features

High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode.

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FGL60N100D igbt by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FGL60N100D
Manufacturer	Fairchild (now onsemi)
File Size	438.29 KB
Description	IGBT
Datasheet	FGL60N100D Datasheet

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Full PDF Text Transcription (Reference)

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FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications Features • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 2.