FGL60N170D - IGBT

Fairchild (now onsemi)

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses.

FGL60N170D is designed for the Induction Heating applications.

Key Features

High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode.

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FGL60N170D igbt by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FGL60N170D
Manufacturer	Fairchild (now onsemi)
File Size	558.96 KB
Description	IGBT
Datasheet	FGL60N170D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGL60N170D October 2001 IGBT FGL60N170D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. Features • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.