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FGPF30N30 - PDP IGBT

General Description

Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss.

FGPF30N30 offers the optimum solution for PDP applications where low-condution loss is essential.

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Key Features

  • High Current Capability.
  • Low saturation voltage: VCE(sat) =1.4V @ IC = 20A.
  • High Input Impedance.
  • Fast switching.
  • RoHS Complaint General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FGPF30N30 300V, 30A PDP IGBT September 2006 FGPF30N30 300V, 30A PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.4V @ IC = 20A • High Input Impedance • Fast switching • RoHS Complaint General Description Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution loss is essential. Application . PDP System TO-220F 1 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings Symbol VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.