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FGPF45N45T - PDP Trench IGBT

General Description

Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

PDP System C TO-220F 1 1.Gate 2.Collector 3.Emitter G E Absolute Maximum Ratings Symbol

Key Features

  • High Current Capability.
  • Low saturation voltage: VCE(sat) =1.6V @ IC = 45A.
  • High input impedance.
  • Fast switching.
  • RoHS complaint tm General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGPF45N45T 450V, 45A PDP Trench IGBT December 2007 FGPF45N45T 450V, 45A PDP Trench IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.6V @ IC = 45A • High input impedance • Fast switching • RoHS complaint tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications • PDP System C TO-220F 1 1.Gate 2.Collector 3.