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FGPF45N45T - PDP Trench IGBT

Description

Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

PDP System C TO-220F 1 1.Gate 2.Collector 3.Emitter G E Absolute Maximum Ratings Symbol

Features

  • High Current Capability.
  • Low saturation voltage: VCE(sat) =1.6V @ IC = 45A.
  • High input impedance.
  • Fast switching.
  • RoHS complaint tm General.

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Datasheet preview – FGPF45N45T

Datasheet Details

Part number FGPF45N45T
Manufacturer Fairchild Semiconductor
File Size 593.73 KB
Description PDP Trench IGBT
Datasheet download datasheet FGPF45N45T Datasheet
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Full PDF Text Transcription

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FGPF45N45T 450V, 45A PDP Trench IGBT December 2007 FGPF45N45T 450V, 45A PDP Trench IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.6V @ IC = 45A • High input impedance • Fast switching • RoHS complaint tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications • PDP System C TO-220F 1 1.Gate 2.Collector 3.
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