FGPF90N30 Datasheet | Fairchild Semiconductor

Features - High Current Capability - Low saturation voltage: VCE(sat) =1.5V @ IC = 60A - High Input Impedance - Fast switch - Ro HS plaint tm Description Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF90N30 offers the optimum solution for PDP applications where low-condution loss is essential. Application . PDP System TO-220F 1 1.Gate 2.Collector 3.Emitter .. Absolute Maximum Ratings Symbol VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25o C @ TC = 25o C @ TC = 100οC Description Collector-Emitter Voltage 300 ± 30 220 56.8 22.7 -55 to +150 -55 to +150 300 Units V V A W W o C o C o Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 - Ic_pluse limited by max Tj Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. 2.2 62.5 Units o o C/W C/W ©2006 Fairchild Semiconductor...