FMBM5401 Datasheet | Fairchild Semiconductor

FMBM5401 PNP General Purpose Amplifier PNP General Purpose Amplifier - This device has matched dies in Super SOT-6. C2 E1 .. C1 B2 E2 pin #1 B1 Super SOTTM-6 Mark: .4S2 Absolute Maximum Ratings- Symbol VCEO VCBO VEBO IC TJ, TSTG Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Value -150 -160 -5.0 -600 -55 ~ 150 Units V V V m A °C Operating and Storage Junction Temperature Range - These ratings are limiting values above which the serviceability of any semiconductor device may e impaired. Electrical Characteristics Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO h FE1 DIVID1 h FE2 DIVID2 h FE3 DIVID3 TC = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage - Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Conditions IC = -1.0m A, IB = 0 IC = -100µA, IE = 0 IC = -10µA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, Ta = 100°C VEB = -3.0V, IC = 0 VCE = -5V, IC = -1m A h FE1(Die1)/h FE1(Die2) VCE = -5V, IC = -10m A h FE2(Die1)/h FE2(Die2) VCE = -5V, IC = -50m A h FE3(Die1)/h FE3(Die2) Min. -150 -160 -5.0 Max Units -50 -50 -50 n A µA n A On Characteristics- DC Current Gain Variation Ratio of h FE1 Between Die 1 and Die 2 DC Current Gain Variation Ratio of h FE2 Between Die 1 and Die 2 DC Current Gain Variation Ratio of h FE3 Between Die 1 and Die 2 50 0.9 60 0.95 50 0.9 1.1 1.1 240 1.05 ©2005 Fairchild Semiconductor...