FMBM5551 Datasheet | Fairchild Semiconductor

FMBM5551 NPN General Purpose Amplifier April 2005 NPN General Purpose Amplifier - This device has matched dies - Sourced from process 16. - See MMBT5551 for characteristics .. E1 C1 C2 B2 E2 pin #1 B1 Mark: .3S2 Dot denotes pin #1 Super SOTTM-6 Absolute Maximum Ratings - Symbol VCEO VCBO VEBO IC PC TJ TSTG TθJA Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Value 160 180 6 600 0.7 150 -55 ~ 150 180 Units V V V m A W °C °C °C/W - Pd total, for both transistors. For each transistor, Pd = 350m W Electrical Characteristics Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO h FE1 DIVID1 h FE2 DIVID2 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain TC = 25°C unless otherwise noted Parameter Conditions IC = 1m A, IB = 0 IC = 100µA, IE = 0 IC = 10µA, IC = 0 VCB = 120V VCB = 120V, Ta = 100°C VEB = 4V VCE = 5V, IC = 1m A h FE1(Die1)/h FE1(Die2) VCE = 5V, IC = 10m A h FE2(Die1)/h FE2(Die2) Min. 160 180 6 Max Units 50 50 50 80 0.9 80 0.95 1.1 250 1.05 n A µA n A On Characteristics Variation Ratio of h FE1 Between Die 1 and Die 2 DC Current Gain Variation Ratio of h FE2 Between Die 1 and Die 2 ©2005 Fairchild Semiconductor Corporation .fairchildsemi. FMBM5551 Rev....