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Light Reflection Emitter / Sensor Array
Optoelectronic Products
4-8
FPA103,FPA104 FPA105,FPA106 FPA107,FPA108
General Description The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon npn phototransistor. The axial radiant intensity of the diode and the axial response o.f the phOtotransistor are perpendicular to the face of the device; therefore, the phototransistorresponds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the phototransistor.
The diode used in theFPA 103/104/105/106/1071 108 is similar to Fairchild's FPE104 GaAs infraredemitting diode. I.t emits an intense, narrow band of radiation, peaking at approximately 900 nm (nonvisible) when forward biased.
FPA103 Datasheet
