FPA104 Description
The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon npn phototransistor. The axial radiant intensity of the diode and the axial response o.f the phOtotransistor are perpendicular to the face of the device; therefore, the phototransistorresponds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the phototransistor.