Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 10A, 600V, RDS(on) = 0.73Ω @VGS = 10 V.
- Low gate charge ( typical 44 nC).
- Low Crss ( typical 18 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
G DS
TO-3PN
FQA Series
G!
D
!.
- ◀▲.
- !
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Dr.
FQA10N60C Datasheet
